RAM

Specs Chipset Validation N/A Comp. Config 2Gb x 4 Data Rate 2666 MT/s Density 32GB FBGA Code N/A Part Status Production

Kapacita: 16 GB (modul) Technológia: DDR4 Frekvencia: 3200 MHz Kontrola chýb: ECC CAS Latencia: CL22 Spracovanie signálu: Unbuffered Pracovné napätie: 1.2V Chladenie: - Prevedenie: SODIMM 1Rx8 16GB DDR4 3200MT/s ECC Unbuffered SODIMM DDR4 3200MT/s ECC Unbuffered SODIMM CL22 1RX8 1.2V 260-pin 16Gbit * poznámka: o

Kapacita: 16 GB (modul) Technológia: DDR4 Frekvencia: 3200 MHz Kontrola chýb: ECC CAS Latencia: CL22 Spracovanie signálu: Unbuffered Pracovné napätie: 1.2V Chladenie: - Prevedenie: SODIMM 1Rx8 16GB DDR4 3200MT/s ECC Unbuffered SODIMM DDR4 3200MT/s ECC Unbuffered SODIMM CL22 1RX8 1.2V 260-pin 16Gbit * poznámka

16GB DDR4 3200MT/s ECC Unbuffered SODIMM DDR4 3200MT/s ECC Unbuffered SODIMM CL22 1RX8 1.2V 260-pin 16Gbit Hynix C * poznámka: označenie MHz je totožné s označením MT/s, ktoré je používané ako nové označenie prenosu dátovej rýchlosti.

Density: 32GB Technology :DDR4 SDRAM Part Status: Production Depth: 2Gb Width: x72 Voltage: 1.2V Data Rate: 3200 MT/s

Density: 32GB Technology :DDR4 SDRAM Part Status: Production Depth: 2Gb Width: x72 Voltage: 1.2V Data Rate: 3200 MT/s

Density: 16GB Technology :DDR4 SDRAM Part Status: Production Depth: 2Gb Width: x72 Voltage: 1.2V Data Rate: 3200 MT/s

Density: 16GB Technology :DDR4 SDRAM Part Status: Production Depth: 2Gb Width: x72 Voltage: 1.2V Data Rate: 3200 MT/s Comp. Config: 2Gb x 4

64GB DDR4 3200MT/s ECC Registered DIMM DDR4 3200MT/s ECC Registered DIMM CL22 2RX4 1.2V 288-pin 16Gbit Hynix C Rambus

DDR 4. 128GB . 3200MHz. ECC Reg Samsung 1.2V, Supermicro certified

DDR 4. 128GB . 3200MHz. ECC Reg Samsung 1.2V, Supermicro certified